Full text of “IC Datasheet: EPROM” Jameco Part Number M NMOS Kbit (32Kb x 8) UV EPROM NOT FOR NEW DESIGN □ FAST. datasheet, pdf, data sheet, datasheet, data sheet, pdf, General NMOS K 32K x 8 UV EPROM Others with the same file for datasheet. (EPROM). The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin.

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When parallel programming several devices which share the common bus, Vpp should be lowered to Vcc 6V and the normal read mode used to exe- cute a program verify.

For further information on any aspect of this device, dayasheet contact STMicroelectronics Sales Office nearest to you. The integrated dose i. Two identifier bytes may then be sequenced from the device outputs by toggling address line AO from Vil to Vih. For the STMi- croelectronics M, these two identifier bytes are given below.

The associated transient voltage peaks can be sup- pressed by complying with the two line output control and by properly selected decoupling ca- pacitors.

Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute Maximum Ratings” may cause permanent damage to the device.

Research shows that constant exposure to room level fluorescent lighting could erase a typical M in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. To activate this mode, the programming equipment must force The 272556 line control function allows: All other address lines must be held at Vil during Electronic Signature mode.


It is recommended that a 1 j.

eprom datasheet & applicatoin notes – Datasheet Archive

Programming reliability is also ensured as the incremental program margin of each byte is continually monitored to determine when it has been successfully programmed. This publication supersedes and replaces all information previously supplied. The supply current, Ice, has three segments that are of interest to the system designer: The duration of the initial E pulse s is 1 ms, which will then be followed by a longer over- program pulse of length 3ms by n n is equal to the number of the initial one millisecond pulses applied Table 3.

When in the standby mode, the outputs are in a high impedance state, independent of the G input.

The recommended erasure procedure for the M is exposure to short vyave ultraviolet light which has wavelength A. The bulk capacitor should be located near the power supply connection point. Program Verify A verify should be performed on the programmed bits to determine that they were correctly pro- grammed. Specifications mentioned in this publication are subject to change without notice. The length of the Over-program Pulse varies from 2.

However, STMicroeiectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.

Datasheet pdf – K (32k x 8) Bit NMOS UV Erasable PROM – General Semiconductor

A single 5V power supply is required in the read mode. It should be noted that sunlight datwsheet some type of fluorescent lamps have wavelengths in the A range. Search the history of over 2725 web pages on the Internet. Up to 25 one-millisecond pulses per byte are provided for before the over program pulse is applied.


The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output.

Assuming that the addresses are stable, address access time tflivov is equal to the delay from E to output datashdet. Although only “Os” will be programmed, both “1 s” and “Os” can be present in the data word. Output Enable G is the output control and should be used to gate data to the output pins, inde- pendent of device selection.

27256 – 27256 256K EPROM Datasheet

The levels required forthe address and data inputs are TTL. F ceramic dataheet be used on every device between Vcc and Vss- This should be a high frequency capacitor of low catasheet inductance and should be placed as close to the device as possible. Full text of ” IC Datasheet: It is organized as If the M is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque lables be put over the M window to prevent unintentional erasure.

Program Inhibit Programming of multiple Ms in parallel with different data is also easily accojnplished. Two Line Output Control Because Perom are usually used in larger mem- ory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection.