EC ELECTRIC CIRCUITS AND ELECTRON DEVICES the equivalent circuit of UJT and explain its operation. Write short notes on light activated SCR. 2nd Semester CSE Notes: 1. Basic civil & Mechanical Notes and Question answers – View. 5. Electron Devices & Electric circuits (EC) – Unit 1 – View /. PH Engineering Physics 2 Anna University Notes: PH Engineering notes (EM notes – ME Notes) – DOWNLOAD EC

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At anti resonance the parallel resonant circuit acts as current amplifier. Newer Post Older Post Home. Never Miss an Update.

The width of the depletion region is W and the electric field variation in the x-direction is E x. It differs from ordinary PN diode in the sense that it has three terminals namely Emitter, Base1 and Base 2. It is also called Photo detector.

EC Electric circuits and electron devices Lecture Notes- V+ Edition

Once the SCR is turned ON, it starts to conduct and remains in conduction state even when the gate signal is removed. Calculate the value of R. As a result the energy level in the n-side decreases when compared to the unbiased state.

Which of the following figures represents the electric field profile near the pn junction? It exhibits a high input resistance, typically many mega ohms. The storage elements deliver their energy to the resistances, hence the response changes with time, gets saturated after sometime, and is referred to the transient response. Explain the loop analysis of analyzing a given network, with a ec2511 example. The magnitude matching can be achieved by adjusting mutual inductance to the critical value, which effectively fulfills maximum power transfer condition.


It is used in demodulator, encodes and light detectors systems. This diode has negative resistance region. Find values of Q-factor for an inductor and capacitor. To collect majority charge carriers. Reverse Characteristics The reverse characteristic is obtained by reversing the connections of the d.

EC Electric Circuits and Electron Devices ECED Notes

Photovoltaic sensors It is a light-sensitive semiconductor device, and it produces a voltage, when the voltage fc2151 and the intensity of light falling on the semiconductor junction of this photovoltaic cell increases. In phototransistors, the current is dependent mainly on the intensity of light entering into the lens and the voltage applied to the external circuit.

Hotes has long life time. Parallel Resistance Two elements are in parallel if they are connected between share the same two distinct end nodes. The gain of a highly resonant circuit attains a sharp maximum or minimum at its resonant frequency. The right hand side of the ec21551 is the current source connected to the respective nodes.

Steps to follow for the. As reverse bias is increased this current increase. This constitutes emitter current IE.


The photon energy is given by the band gap, which depends on the semiconductor material. It is used as a variable reactance capacitance. Third method is forced commutation.

Node voltage method The node voltage method of analysis solves for unknown voltages at circuit nodes in terms of a system of KCL equations. It is also possible to adjust phase e2c151 such that impedance at generator side becomes resistive. Ef2151 Resonance is defined as a phenomenon in which applied voltage and resulting current are in phase.

This diode has negative resistance region. Due to this multiplication process a large current flows and this kind of breakdown is called Avalanche multiplication or breakdown.

Second Semester Anna University lecturer notes

When the diode is reverse biased under this condition the electrons from n-side are attracted by the positive plate and hence move away from the junction. Two electrical networks which are governed by the same type of equations are called duality.

Current conduction I PNP transistors is by movement of holes. Anna University – B. Such curves are known as Static characteristic curves. SCR size is very compact.