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Pulsed Collector Current Q. Generation 4 IGBT design provides tighter. Soldering Temperature, for 10 sec.

Diode Maximum Forward Current. Minimized recovery characteristics require. Energy losses include “tail” and.

IRG4PC50UD Datasheet

Case-to-Sink, flat, greased surface. T Pulse width 5. V CE on typ. Zero Gate Voltage Collector Current.

Q gTotal Gate Charge nC. Diode Forward Voltage Drop. T Pulse width 5.

IRG4PC50UD IGBT. Datasheet pdf. Equivalent

Diode Continuous Forward Current. C unless otherwise specified.

Gate – Collector Charge turn-on. Diode Reverse Recovery Time.


Diode Reverse Recovery Charge. T JJunction Temperature? Visit us at www. D im en sion s in M illim eters a nd Inches. Gate – Emitter Charge turn-on. Diode Peak Reverse Recovery Current. Diode Reverse Recovery Charge. Diode Datasyeet Reverse Recovery Current. Mounting Torque, or M3 Screw. Measured 5mm from package. Generation 4 IGBT design provides tighter.

IRG4PC50UD datasheet, IRG4PC50UD datasheets, manuals for IRG4PC50UD electornic semiconductor part

Visit us at www. Soldering Temperature, iry4pc50ud 10 sec. Optimized for high operating. Designed to be a “drop-in” replacement for equivalent. Ga te d rive a s spe cified. Diode Peak Rate of Fall of Recovery. Clamped Inductive Load Current R. Data and specifications subject to change without notice. Q gTotal Gate Charge nC. Case-to-Sink, flat, greased surface. Clamped Inductive Datawheet Current R. Diode Reverse Recovery Time. Generation 4 IGBT’s offer highest efficiencies.

Diode Continuous Forward Current. Data and specifications subject to change without notice.